A quantum-design approach to reduce the Auger losses in wavelength=2- micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6X lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7X and represents about a 19- fold reduction in the equivalent 'Auger coefficient'.

关键词：电子信息；半导体；激光枪；中红外

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This year marks 10th anniversary of the demonstration of the first nano-wire lasers (Huang et ah, 2001). Tremendous progress has been made in various aspects of nanowire lasers, most importantly in material growth and characterization, in understanding the basic physics processes, and in the demonstration of optically pumped lasing. As is true for any semiconductor lasers, electrical injection is indispensable in order for nanowire lasers to have any impact on real-world applications. Design, optimization, and fabrication of the most efficient electrical injection laser structures are critical to the next stage of development of nanowire lasers. Nanowire lasers ultimately have to be fabricated using high-yield mass-production processes, thus a fabrication strategy compatible with the standard laser fabrication processing is important.

关键词：电子信息；半导体；纳米；激光

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Some ternary semiconductor alloys spontaneously order during growth. We observe this phenomenon in some alloys grown for infrared (IR) applications by molecular beam epitaxy (MBE). Ordering can affect not only the crystal structure, but also important optical and electronic properties that ultimately affect a material's suitability for IR device applications. It is important to be aware of the presence of ordering, which is not usually detectable by the standard (004) x-ray diffraction (XRD) measurements typically used as a simple measurement of film quality.

关键词：电子信息；半导体；分子数；外延

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The Commissioninstituted this investigation on January 4, 2011, based on a complaint filed by Rambus Inc. of Sunnyvale, California (Rambus), alleging a violation of section 337 in the importation, sale for importation, and sale Withinthe United States after importation of certain semiconductor chips and products containing the same. 76 Fed. Reg. 384 (Jan. 4, 2011). The complaint alleged the infringement of various claims of patents including U.S. Patent Nos. 6,470,405; 6,591,353; 7,287,109 (collectively, the Barth patents); and Nos. 7,602,857; and 7,715,494 (collectively, the Dally patents). The Barth patents share a common specification, as do the Dally patents.

关键词：电子信息；半导体；芯片；产品

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The past decade has witnessed much research effort in the field of MIR semiconductor lasers. Among others, antimonide-based semiconductors which offer an unrivaled variety of alloys, bandgaps, and band structures emerged as the key MIR technology. Its versatility and the progress made in its epitaxial growth and processing allow conceiving a patchwork of devices to cover the whole MIR wavelength range. Diode lasers based on GaInAsSb/AlGa(In)AsSb type-Ⅰ QWs have progressively matured, and DFB diode lasers now cover the whole 2-3.5 μm wavelength range while V(E)CSELs are still limited to below 2.8 μm. At longer wavelength, ICLs based on InAs/GalnSb type-Ⅱ QWs have recently demonstrated impressive performances around 4μm while InP-based QCLs show exceptional properties around 5μm. Finally, InAs/AlSb-based QCLs have shown that they are the only approach able to cover the whole MIR with a single type of device although they still do not operate in CW. Thus, there is still a "narrow MIR gap" which is poorly addressed by existing results and needs to be filled in.

关键词：电子信息；半导体；激光器；中红外

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The current modulation of a two-section semiconductor laser is first reviewed analytically using a well-known, closed-form, modulation expression. A system of traveling-intensity equations is then used to investigate spatial effects in these lasers including cavity layout and the role played by cavity length. The numerical simulations verify the accuracy of the analytic expression for short cavities (low frequencies) but identify shortcomings as the cavity length (modulation frequency) is increased. One notable difference is the presence of resonant peaks in the modulation response. Although this effect has been addressed in the past, the arrangement of sections within the laser is shown to play a prominent role in these monolithic devices for what we believe to be the first time. In the course of this investigation the thirteen different ways a two-section semiconductor laser can be current modulated are identified and computationally investigated.

关键词：电子信息；半导体；激光器；调制

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This work investigates the implementation of all-optical wavelength conversion and logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode (MMFP-LD), and a optical band-pass filter (BPF). The DFB lasers are externally modulated to represent logic inputs into the cavity of the MMFP-LD slave laser. The master lasers' wavelengths are aligned with the longitudinal modes of the MMFP-LD slave laser and their optical power is used to modulate the injection conditions in the slave laser. The optical BPF is used to select the longitudinal mode that is suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter, a key component in advanced wavelength-division multiplexing networks. The result of this experimental investigation is a more comprehensive understanding of the locking parameters concerning the injection of multiple lasers into a multi-mode cavity. Attention is placed on the turn-on/turn-off transition dynamics, along with the maximum achievable bit rates. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

关键词：电子信息；半导体；全光；激光器

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We have attempted to review the most important developments in ultra-short pulse generation by mode-locked semiconductor lasers. Due to the practical limitations and the increasingly broad nature of the field, the choice of emphasis may have been by necessity subjective; apologies are extended to those authors whose work may not have been given due prominence. The overall conclusion is that mode-locked semiconductor laser technology is now successfully challenging lasers of other type in a wide variety of existing applications, and new applications can emerge, stimulated by high-performance available.

关键词：电子信息；半导体；激光器；锁模

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报告从政策监管、行业要闻、区域要闻、企业要闻几个方面对10月下半月通信行业要闻进行了综述。

关键词：通信；软件；移动互联网；移动电信；LTE；宽带；5G

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In this chapter, we selected a few typical commercial power electronic controllers to illustrate their development and application in solving real-world problems. It is clear that, for different applications, the circuit topologies and controllers take different forms. Even for the same application with the same circuit topology, different controllers and methods are still used to achieve different performance and characteristics.

关键词：电子信息；电子；控制器；商业

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