In this project we have investigated the potential of nanofluidic lab-on-chip technology to be used as platforms for free-flow separation, concentration, and identification of biomolecules. Specifically, the goals of this project have been to: 1) demonstrate Field Amplified Sample Stacking (FASS) for specific DNA samples, and 2) demonstrate identification of target single stranded DNA (ssDNA) from a complex mixture of DNA, containing strands of different composition and size. We have achieved both goals and, in some cases, expanded the investigation from the original tasks. The results of our studies, elaborated in the following sections, suggest that lab-on-chip nanofluidic platforms may enable rapid and inexpensive, characterization and analysis of DNA biomarkers. Advantages include overall ease of operation of the device, which does not require loading of gels as sieving matrices; inexpensive analysis, as the only reagents required are water-based buffers; fast identification, since sample signatures can be produced in the order of less than a minute. Findings from this work have resulted in peer-reviewed publications (one conference and one journal paper). Potential target applications of our identification platform include analysis of DNA biomarkers for environmental pollutants or early disease diagnosis: analysis of mitochondrial DNA for forensic identification: investigation of protein kinetics.

关键词：芯片；奈米流体；DNA芯片

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Solid State Lighting is a cost-effective, energy-conserving technology serving a rapidly expanding multi-billion dollar market. This program was designed to accelerate this lighting revolution by reducing the manufacturing cost of Illumination-Grade LEDs. The technical strategy was to investigate growth substrate alternatives to standard planar sapphire, select the most effective and compatible option, and demonstrate a significant increase in Lumen/$ with a marketable LED. The most obvious alternate substrate, silicon, was extensively studied in the first two years of the program. The superior thermal and mechanical properties of Si were expected to improve wavelength uniformity and hence color yield in the manufacture of high-power illumination-grade LEDs. However, improvements in efficiency and epitaxy uniformity on standard c-plane sapphire diminished the advantages of switching to Si. Furthermore, the cost of sapphire decreased significantly and the cost of processing Si devices using our thin film process was higher than expected. We concluded that GaN on Si was a viable technology but not a practical option for Philips Lumileds. Therefore in 2012 and 2013, we sought and received amendments which broadened the scope to include other substrates and extended the time of execution. Proprietary engineered substrates, off-axis (non-c-plane) sapphire, and c-plane patterned sapphire substrates (PSS) were all investigated in the final 18 months of this program. Excellent epitaxy quality was achieved on all three candidates; however we eliminated engineered substrates and non-c-plane sapphire because of their higher combined cost of substrate, device fabrication and packaging. Ultimately, by fabricating a flip-chip (FC) LED based upon c-plane PSS we attained a 42% reduction in LED manufacturing cost relative to our LUXEON Rebel product (Q1-2012). Combined with a flux gain from 85 to 102 Lm, the LUXEON Q delivered a 210% increase in Lm/$ over this time period. The technology was commercialized in our LUXEON Q product in Sept., 2013. Also, the retention of the sapphire increased the robustness of the device, enabling sales of low-cost submount-free chips to lighting manufacturers. Thus, blue LED die sales were initiated in the form of a PSS-FC in February, 2013.

关键词：光芯片；成本效益；力学性能

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This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards.

关键词：电子封装；硅碳化物；温度传感器；芯片

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关键词：图片芯片；双折射；图像处理；白平衡

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The interim report describes an initial effort to fabricate an Integrated Photonic Circuit (IPC) which provides a means for converting an optical laser signal, that consists of both a narrow-line carrier wavelength and a heterodyned RF signal that are in-phase, to an electrical RF signal that can drive various on-chip components such as an antenna. The IPC would supply a critical missing element for enabling new phased-array radar based on an all- optical architecture. Ge-on-Si technology, the focus of the effort, has specific advantages that are fundamental to nearly all integrated photonic circuits. Its direct energy bandgap, slightly larger than Ge s indirect bandgap, permits band-to-band recombination/generation at an energy that corresponds to light near the standard optical communications wavelength. Ge-on-Si technology, therefore, could enable a host of IPC subcomponents including photodetectors, laser diodes, and enhanced silicon modulators. In addition, such germanium devices can be simply and inexpensively incorporated into a silicon manufacturing process.

关键词：芯片；射频脉冲；集成系统；光通信

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Our recent work on the use of wavelength conversion and dispersive propagation to produce large tunable delays shows great promise for applications that require information to be buffered. In Phase III of the DARPA/DSO slow light program, we propose to extend our work in conversion/dispersion slow light. Our approach will be transparent to OOK and DPSK modulation formats. The frequency conversion will be performed via broadband four-wave mixing (FWM) in Si nanowaveguides. We will develop two different dispersive delay components that are based on optical fiber or on Si waveguides, which will allow us to pursue a communication systems demonstration as well as demonstrating the fundamental ability to achieve significantly longer optical delays than previously achieved in both fiber-based or chipbased systems.

关键词：芯片；转换片；四波混合

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Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

关键词：芯片；高温环境；压力传感器

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关键词：芯片；图像处理；现有设备

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Through a technical exchange with Delft University, the NUS research team has gained valuable knowledge and have achieved the first results with the electron-impact ion source system. Through this exchange, the team has achieved a realistic design for the ion source test bench which has produced its first beams at 3 keV and is currently being tested in Singapore. In a next stage, this system will be employed at ion energies of up to 200 keV. Electron beam calculations have been performed to evaluate different electron guns for their effectiveness in ionizing hydrogen gas molecules in our proposed configuration. Our calculations show that the proposed PBW system is expected to write as fast as commercial electron beam writing systems at sub 10nm, without proximity effects from nearby fabricated features. Several electron impact ionization chips have been designed and tested at Delft and Singapore. At the same time, the new proton beam writing beam line developed under previous grant efforts has been further improved and proton beams now can be focused to 13nm x 29nm.

关键词：芯片；原子来源；离子源

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The objective of the project for the reporting period was to generate a number prostate cancer cell lines that that are either myosin IC isoform A deficient or that constitutively express GFP-myosin IC isoform A. We used shRNA to generate isoform Anegative PC-3 cells and we generated a stable LNCaP cell line that expresses constitutively myosin IC isoform A-GFP. We are now in the process of analyzing the effect of these expression changes on secretion in these cell lines to determine the consequences of isoform A expression changes for the metastatic ability of prostate cancer cells. Using serial cloning of the 5 prime UTR of the human myosin IC gene we have identified a region that is involved in regulatory expression of myosin IC isoform A. We are now in the process of using ChIP assays to identifying the transcriptional elements that bind to this region and induce expression of myosin IC isoform A in prostate cancer cells.

关键词：基因芯片；前列腺癌；异常凝蛋白异构体

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