关键词：芯片；原子来源；离子源
摘 要：Through a technical exchange with Delft University, the NUS research team has gained valuable knowledge and have achieved the first results with the electron-impact ion source system. Through this exchange, the team has achieved a realistic design for the ion source test bench which has produced its first beams at 3 keV and is currently being tested in Singapore. In a next stage, this system will be employed at ion energies of up to 200 keV. Electron beam calculations have been performed to evaluate different electron guns for their effectiveness in ionizing hydrogen gas molecules in our proposed configuration. Our calculations show that the proposed PBW system is expected to write as fast as commercial electron beam writing systems at sub 10nm, without proximity effects from nearby fabricated features. Several electron impact ionization chips have been designed and tested at Delft and Singapore. At the same time, the new proton beam writing beam line developed under previous grant efforts has been further improved and proton beams now can be focused to 13nm x 29nm.