关键词：传感器；硅技术；高频电路；CMOS
摘 要：With the development of modern silicon technology, more and more high-frequency circuits can be implemented in standard complementary metal-oxide-semiconductor (CMOS) processes. The feasibility of RF ICs in standard CMOS process is established, and the trend in putting all components of a system on a chip includes integration of the transceiver (T/R) antenna switch. In this book, we have designed a double-gate (DG) MOSFET and double-pole four-throw (DP4T) RF switch to enhance its performance for the next generation wireless communication systems. Further we have combined the ideas of DG MOSFET and DP4T switch to design a novel DP4T DG RF CMOS switch. The designed DP4T DG RF CMOS switch can route four inputs to two outputs at a time or vice versa. So it is twice effective as compared to the previously existing SPDT switches. In the DG MOSFET, the gates are only on the two sides of the substrate. Hence, to utilize all the sides of the substrate, we have widened the gate all around the device and designed like a cylinder. Therefore, we extend this work to the cylindrical surrounding double-gate (CSDG) MOSFET. It has less contact area with the board compared to the other MOSFETs. Due to the circular source and drain, the gate contact with the source and drain is on a long circular region, which avoids the gate misalignment. This work has been extended by replacing SiO_2 with HfO_2 as a high dielectric material to design DG MOSFET. Finally, we have analyzed the image acquisition of DG MOSFET and CSDG MOSFETs for the purpose of RF switch. The proposed model emphasized on the basics of single image sensor for two-dimensional images of a three-dimensional device, so that we can obtain a satisfactory device parameter.