关键词：隧道二极管；反向二极管；频带边缘陡度；电流；电压
摘 要：We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give information about the prospective subthreshold swing voltage that could be expected in a tunneling field effect transistor.