关键词：隧穿晶体管；可扩展性；电路性能
摘 要：Continuing scaling of transistors as density approaches the terascale regime (1012 devices/cm2) requires evaluating new devices that can perform on several metrics beyond density scaling, such as cost savings, performance improvements, and energy efficiency. A comprehensive review and evaluation of potential new devices is performed. Metrics such as processing cost, plan-view area scaling, and stage delay are benchmarked. One of the most promising devices, tunneling field effect transistors, is also the most confounding, as simulation and experimental results are orders of magnitude apart.