关键词：芯片；飞秒激光；贝塞尔光束
摘 要：Currently, fabrication of vertical connections through silicon substrates is a significant challenge in three-dimensional (3D) assembly of Si IC. In particular, high aspect ratio of over ?10, taper free through vias with micron ～ tens micron diameters in silicon chips are a critical issue for this 3D technology. We report on drilling though vias in silicon chips by use of　1.5 femtosecond Bessel beams, which is transparent to Si, in air and AgNO_3 solutions, respectively. Compared with conventional fabrication methods using Gaussian beams, our technique allows us to perform high performance hole drilling with taper-free structures and without sample translation during the drilling, which can be potentially used for future 3D packages and 3D integration of silicon chips.