关键词：半导体工业；集成电路设计；多金属氧化物；半导体场效应；晶体管器件
摘 要：The semiconductor industry has relied on accurate device models for analyzing, predicting and innovating integrated circuit design.Multi-gate MOSFET device architectures like FinFETs are beginning to replace their planar MOSFET counterparts at the 22 nm technology node to enable continued technology scaling. Vertical cylindrical gate (CG) MOSFET are touted to replace planar MOSFETs as the memory device for DRAM and NAND Flash offering increased area density.