关键词：温度传感器；半导体二极管；PN结；温度传感器； 恶劣环境
摘 要：In this work, a temperature sensor based on 4H-SiC pn diode is theoretically and experimentally investigated. The device is capable of stable operation in a temperature range from 20 °C up to 600 °C. In the forward biased region, the forward voltage of the 4H-SiC pn diode shows linear dependence on temperature at a constant current. This dependence is utilized to sense temperature variations and the proposed device achieves a sensitivity of 3.5 mV/°C. These results indicate that an integrated circuit compatible temperature sensor based on 4H-SiC pn diode is a promising technology for harsh environment sensing applications.