关键词：电子信息；LED；微型显示屏；氮化镓
摘 要：Micro-size light emitting diode (microLED) arrays based on III- nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN microLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip- chip bonded together via indium metal bumps.