关键词：电阻；内存；RRAM
摘 要：In recent years, resistive random access memory (RRAM) has gained significant attention as one of the promising candidates for next generation memory applications. This is due to its anticipated advantages versus Flash technology with respect to high density, low power and fast read and write speed. The main operation mechanism of these devices is a resistance change induced by filament formation through metal-cations or oxygen vacancies.