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新一代内存接口的最终报告

Next Generation Memory Interfaces Final Capstone Report

作者:Sinan Liu 作者单位:Electrical Engineering and Computer Sciences University of California at Berkeley 加工时间:2015-07-07 信息来源:EECS 索取原文[42 页]
关键词:新一代内存接口;内存标准;DDR4;SDRAM
摘 要:Our project, Next Generation Memory Interfaces, aims to develop a physical interface for the latest memory standard i.e. DDR4 SDRAM (Double Data Rate 4th generation, Synchronous Dynamic Random Access Memory). The DDR4 standard allows for memory to be accessed at twice the data rate of its preceding standard, DDR3 while simultaneously reducing the total power consumption and increasing the memory density. As memory devices eternally seek to be faster, denser and extremely low power consuming systems, our interface will get us another step further in this quest.
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