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开辟低功耗设备设计的通道:自底向上的问题、挑战和机遇

Tunneling in low-power device-design: A bottom-up view of issues, challenges, and opportunities
作者:Kartik Ganapathi 作者单位:Electrical Engineering and Computer Sciences University of California at Berkeley 加工时间:2013-11-23 信息来源:EECS 索取原文[107 页]
关键词:低功耗;米级设备;非平衡格林函数;模拟;纳米电子传输设备
摘 要:Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization.The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking down, thus necessitating a quantum-mechanical treatment of the electronic transport problem.
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