关键词：电子信息；电子；变异；检测放大器
摘 要：This chapter describes the READ sense amplifier (SA) of the memory. It discusses the fundamental limitation on the SA performance, especially for the memories in deep sub micron technologies. It covers various calibration based SA design techniques. With the practical implementation details for Multi-sized SA redundancy. And comparison of the various calibration based techniques. Then a charge limited sequential sensing concept is discussed. Finally the design and implementation details of a calibration free SA based on the charge limited sequential sensing is provided.