关键词：电子信息；半导体；激光器；中红外
摘 要：The past decade has witnessed much research effort in the field of MIR semiconductor lasers. Among others, antimonide-based semiconductors which offer an unrivaled variety of alloys, bandgaps, and band structures emerged as the key MIR technology. Its versatility and the progress made in its epitaxial growth and processing allow conceiving a patchwork of devices to cover the whole MIR wavelength range. Diode lasers based on GaInAsSb/AlGa(In)AsSb type-Ⅰ QWs have progressively matured, and DFB diode lasers now cover the whole 2-3.5 μm wavelength range while V(E)CSELs are still limited to below 2.8 μm. At longer wavelength, ICLs based on InAs/GalnSb type-Ⅱ QWs have recently demonstrated impressive performances around 4μm while InP-based QCLs show exceptional properties around 5μm. Finally, InAs/AlSb-based QCLs have shown that they are the only approach able to cover the whole MIR with a single type of device although they still do not operate in CW. Thus, there is still a "narrow MIR gap" which is poorly addressed by existing results and needs to be filled in.