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大块拉巴什半导体BiTeI中的舒勃尼科夫—德哈斯振荡

Shubnikow-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI
作者:Bell, C.Bahramy, M. S.Murakawa, H.Checkelsky, J. G.Arita, R.Kaneko, Y.Onose, Y.Nagaosa, N.Tokura, Y.Hwang, H. Y. 作者单位:Stanford Linear Accelerator Center, CA.;Department of Energy, Washington, DC. 加工时间:2013-11-19 信息来源:科技报告(DE) 索取原文[11 页]
关键词:电子信息;半导体;舒勃尼科夫—德哈斯振荡
摘 要:Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.
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