关键词：隧道场效应晶体管（TFET）；低功率应用；带带穿隧机制
摘 要：In this thesis, the tunneling field-effect-transistor (TFET) is explored to replace conventional MOSFETs for low power applications. The band-to-band tunneling mechanism is looked into in order to develop a more accurate tunneling model that considers the change in effective mass during the transition between the conduction and valence band.
目 录：Acknowledgements

Chapter 1. Introduction

1.1 Power Consumption Becoming a Major Concern

1.2 Possible Solution

1.3 Thesis Outline

1.4 References

Chapter 2. Modeling of Band-to-Band Tunneling

2.1 Introduction

2.2 Model Development

2.3 Comparison to Simulation

2.4 Summary

2.5 References

Chapter 3. Silicon P-I-N Structure TFET

3.1 Introduction

3.2 Silicon P-I-N Structure TFET Process Flow Setup

3.3 Silicon P-I-N TFET Analysis

3.4 Summary

3.5 References

Chapter 4. Achieving sub-60mV/dec Subthreshold Swing

4.1 Introduction

4.2 Silicided Source TFET Fabrication

4.3 Analysis of the Silicided Source TFET

4.4 Subthreshold Swing Data Quality Analysis

4.5 Selective Silicide Using Germanium

4.6 Summary

4.7 References

Chapter 5. Improving the ON Current

5.1 Introduction

5.2 P-I-N TFET with High ION using Spike+Flash Anneal

5.3 Undoped Vertical Pocket Structure TFET

5.4 Summary

5.5 References

Chapter 6. Si/Ge Hetero-structure TFETs

6.1 Introduction

6.2 Germanium P-I-N Structure TFET

6.3 Si/Ge Hetero-structure TFET

6.3.1 Germanium Source Hetero-tructure TFET

6.3.2 Germanium Channel Hetero-structure TFET

6.4 Si/Ge Strained Hetero-structure TFET

6.4.1 Vertical Pocket Strained Hetero-structure TFET

6.4.2 Lateral Strained Hetero-structure TFET

6.4.3 Strained Germanium Epitaxial Growth Experiments

6.5 Summary

6.6 References

Chapter 7. Conclusions

7.1 Summary of Work

7.2 Future Directions

7.3 References