Insulated gate bipolar transistor (IGBT) is a semiconductor power device that is used to control the electrical energy. It provides a stable supply of electricity by reducing the congestion in power supply, leading to optimized power utilization. It is an electronic switch that provides fast switching with electrical efficiency. It is a fusion of bipolar junction transistor (BJT) and power MOSFET (metal oxide semiconductor field effect transistor). IGBTs have the high current handling capability of BJT and high switching speed of power MOSFETs, making it a better device than other transistors. It is also known by names such as bipolar mode MOSFET, conductivity modulated field effect transistor (COMFET), and bipolar MOS transistor.

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction

Key market highlights

Market overview

PART 05: Market landscape

Market size and forecast

Five forces analysis

PART 06: Market segmentation by application

Market overview

EV/HEVs

Industrial applications

Motor drives

Consumer appliances

UPS

Others

PART 07: Market segmentation by product

Market overview

IGBT modules

Discrete IGBTs

PART 08: Geographical segmentation

Market overview

PART 09: Decision framework

PART 10: Drivers and challenges

Market drivers

Impact of drivers on key customer segments

Market challenges

Impact of challenges on key customer segments

PART 11: Market trends

Functional consolidation of semiconductor devices

Increase in use of renewable energy sources

Increased copper wire interconnections

PART 12: Vendor landscape

Competitive scenario

Other prominent vendors

PART 13: Key vendor analysis

Fuji Electric

Infineon Technologies

Mitsubishi Corporation

SEMIKRON

PART 14: Appendix

List of abbreviations

PART 15: Explore Technavio