关键词：电子信息；集成电路；微波；设计
摘 要：A very broadband distributed amplifier was designed using a 0.13- micrometer gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of this circuit was performed as part of the fall 2011 Johns Hopkins University Monolithic Microwave Integrated Circuit (MMIC) Design Course, taught by the author. The design approach is applicable to very broadband, low noise MMICs that could be used for a variety of radio frequency (RF) and microwave systems.