欢迎访问行业研究报告数据库

行业分类

当前位置:首页 > 报告详细信息

找到报告 1 篇 当前为第 1 页 共 1

提交给TriQuint半导体制造的0.15微米氮化镓(GaN)微波集成电路设计

0.15-micron Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication
作者:Penn, J. 作者单位:Army Research Lab., Adelphi, MD. Sensors and Electron Devices Directorate. 加工时间:2013-10-20 信息来源:科技报告(AD) 索取原文[18 页]
关键词:电子信息;集成电路;氮化镓;设计
摘 要:High-speed electronic circuits are needed for Army systems in communications, wireless sensors, imaging, and other systems. Gallium nitride (GaN) technology offers the highest power densities for radio frequency (RF) and wireless integrated circuits. Several GaN broadband high power efficient power amplifier designs for high frequency operation, such as satellite communications (SATCOM), were recently designed and submitted for fabrication using a proprietary 0.15-micrometer GaN process under development at TriQuint Semiconductor. These monolithic microwave integrated circuits (MMICs) are being fabricated by TriQuint as part of a recent cooperative research and development agreement (CRADA) with the U.S. Army Research Laboratory (ARL).
© 2016 武汉世讯达文化传播有限责任公司 版权所有 技术支持:武汉中网维优
客服中心

QQ咨询


点击这里给我发消息 客服员


电话咨询


027-87841330


微信公众号




展开客服