关键词：低维材料；门控制；TMDC薄膜；半导体；三五族
摘 要：Ever since the invention of the transistor, aggressive channel length scaling has been pursued to achieve higher performance and greater packing density. In order to preserve gate control at short channel lengths, the transistor channel has evolved from bulk to low dimensional substrates, such as 2D thin films and 1D nanowires. For scaling to continue, it is vital that we understand the processing and physics of low dimensional materials.Chapter 2 focuses on quasi-2D ultrathin body InAsSb-on-insulator n-FETs. 1D InAs nanowire (NW) n-FETs are explored in chapter 3.Chapter 4 explores 2D transition metal dichalcogenide (TMDC) thin films. In chapter 5 we present heterojunction diodes formed by thin films of InAs and WSe2.