关键词：氮化镓；宽带隙半导体材料；允许；较大；流动移动
摘 要：GaN is a wide bandgap semiconductor material that has emerged as a prominent solution to the drawbacks of its traditional counterpart, silicon, especially in power electronics. A wide bandgap allows a larger flow of energy to move electrons in GaN than in silicon. Silicon has always been the preferred choice for computing and electronic devices since its invention, almost 50 years ago.
目 录：

PART 01: Executive summary

Highlights

PART 02: Scope of the report

Market overview

Product offerings

PART 03: Market research methodology

Research methodology

Economic indicators

PART 04: Introduction

Key market highlights

PART 05: Market landscape

Industry overview

Technology landscape

Market overview

Market size and forecast

Five forces analysis

PART 06: Market segmentation by geography

Global GaN semiconductor devices market by geography

2014

Global GaN semiconductor devices market by geography

2019

GaN semiconductor devices market in North America

GaN semiconductor devices market in Europe

GaN semiconductor devices market in APAC

PART 07: Market segmentation by product

Product segmentation

Global GaN opto semiconductor devices market 2014-

2019

Global GaN power semiconductor devices market 2014-

2019

PART 08: Market segmentation by end-user 30

Market overview

PART 09: Market drivers

PART 10: Impact of drivers

PART 11: Market challenges

PART 12: Impact of drivers and challenges

PART 13: Market trends

PART 14: Vendor landscape

Competitive scenario

Key vendors 2014

Other prominent vendors

PART 15: Key vendor analysis

Avago Technologies

Cree

GaN Systems

Infineon Technologies

OSRAM Opto Semiconductors

Qorvo

PART 16: Appendix

List of abbreviations

PART 17: Explore Technavio