关键词：光电子器件；纳米材料；III-V；InGaAs
摘 要：In this dissertation, a novel growth mechanism that yields catalyst-free, self-assembled, single-crystalline nanoneedles and nanopillars on dissimilar substrates will be presented. At CMOS-compatible growth temperatures (400 ~ 455 oC), single-crystalline InGaAs and InP nanostructures are grown on silicon and poly-silicon substrates via metalorganic chemical vapor deposition.