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航天应用中氮化镓和碳化硅半导体器件的热循环的影响

Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use
作者:Patterson, R. L.Hammoud, A. 作者单位:National Aeronautics and Space Administration, Cleveland, OH. NASA John H. Glenn Research Center at Lewis Field. 加工时间:2013-11-19 信息来源:科技报告(NASA) 索取原文[23 页]
关键词:电子信息;半导体;热循环;航天
摘 要:Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program.
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