关键词：电子信息；电子；集成电路；放大器
摘 要：A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13- m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU Power MMIC Design Course. This approach is useful for designing relatively broadband amplifiers that are limited only be the active transistor's 'Q'.