Chemical vapor deposition (CVD) is primarily used to deposit diverse thin films of amorphous metal or crystalline, oxides, carbides, nitrides, inter-metallic compounds and inorganic polymer. In the semiconductor industry, CVD process is primarily used to create varied layers such as electrode (capacitor or gate), intermetal dielectric (IMD) and interlayer dielectric (ILD). Precursors for CVD of metal oxides generally fall into one of three classifications: inorganic, metal-organics and organo-metallic compounds.

Chapter 1 Methodology and Scope 

Chapter 2 Executive Summary 

Chapter 3 High k and ALD/CVD Metal Precursors Industry Outlook 

Chapter 4 High K and ALD/CVD Metal Precursors Technology Outlook

Chapter 5 High k and ALD/CVD Metal Precursors Regional Outlook

Chapter 6 Competitive Landscape