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超速的半导体激光源

Ultrafast Semiconductor Laser Sources
作者:Masahiro Aoki 作者单位:Hitachi, Ltd., Research & Development Group, 1-6-1, Marunouchi, Chiyoda-ku, Tokyo 100-8220, Japan 加工时间:2013-11-10 信息来源:科技报告(other) 索取原文[50 页]
关键词:电子信息;半导体;激光源;超速
摘 要:This chapter reviews recent technological progress in the development of ultrafast light sources for achieving small footprint and low-power consumption optical transceivers. The focus is on various important light sources, for example, directly modulated diode lasers with high optical-gain materials, low-chirp externally modulated diode lasers, and ultrafast diode lasers with new structure and modulation scheme. The coverage of the topics starts with an in-depth theoretical treatment of key characteristics and dependences, illustrates typical realizations of ultrafast diode lasers and integrated laser-modulators, and includes relevant operation and performance characteristics as well.
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