关键词：晶体管；独立电路芯片；高电气性能
摘 要：Combining the electrical performance of modern high frequency silicon nanoelectronics with additional properties of mechanical flexibility and stretch-ability continuously arouses a sustained interest for its utility in a broad range of space-weight-and-power (SWAP) constrained applications related to e.g. healthcare, structure monitoring, sport, telecommunication, security chips. However, the fabrication of transistors and circuits featuring high electrical performance independently of their deformation state (i.e. flat, folded, or stretched for instance) still constitutes an unresolved challenge. Although many different techniques based on the transfer of high mobility nanostructures or patterned thin-films onto flexible plastic foils constitute possible solutions with their respective advantages and weaknesses, little attention has been paid so far to the thinning of mature rigid technology in the ultra-thin regime followed by transfer-bonding onto a flexible handler. The basic idea developed in this chapter is to combine the advantages of a mature radio-frequency (RF) SOI-CMOS technology with mechanical flexibility provided by thinning. Moreover, performance invariance of flexible systems is another challenge requiring a careful inspection to retain function and to guarantee operation stability. A method based on silicon thinning, transfer-bonding and neutral plane engineering is therefore proposed to produce flexible devices and circuits combining high electrical and mechanical performance, in addition to functional invariance upon deformation. In this chapter, it is demonstrated that SOI MOSFETs featuring high frequency, low noise and low power characteristics can withstand curvature radii down to the centimetre range without noticeable variation of their static and high frequency performance. The thinning and transfer-bonding of rigid technology is performed using successive chemical-mechanical lapping, wet etching and dry cleaning steps followed by room temperature bonding. Static, high frequency and noise characterization completely validate this process. Consistently with mechanical modelling, electrical measurements in bent configurations confirm the invariance of electrical performance upon flexure. Beyond the in-depth analysis of SOI-MOSFETs, CMOS circuits have been characterized to demonstrate that this technology paves the way to flexible electronic applications requiring complexity and frequency performance.