关键词：光致发光；量子点；辐射损伤；降解
摘 要：The University of New Mexico has undertaken a study to determine the effects of radiation on Quantum Dot Photonic Integrated Circuits (QDPICs). Over the course of the last year, the constituent III-V active semiconductor materials and Si-photonic components forming these QDPICs have been designed, grown and fabricated. Photoluminescence studies before and after radiation exposure have been conducted on bare wafer samples for the III-V quantum-confined laser materials to isolate the damage to the active semiconductor materials themselves. Further techniques to probe radiation damage at the wafer level have been highlighted as well as methods to assess performance degradation at the device level. These studies should pave the way towards the quantitative assessment of the survivability of next-generation multi-cell processors based on optical interconnects.