一种低压、高电流的隧道晶体管的设计
Designing a Low Voltage, High Current Tunneling Transistor
作者:Sapan Agarwal;Eli Yablonovitch
作者单位:University of California
加工时间:2014-03-14
信息来源:EECS
索取原文[26 页]
关键词:隧道晶体管;隧道场效应晶体管;频带边缘陡度
摘 要:
内 容:When trying to design a new low voltage switch to replace the transistor, there are three major requirements need to be fulfilled.