关键词：光机电；传感器；CMOS；设计
摘 要：Image sensors have become significant due to the high demand from different applications. Charge-Coupled Device (CCD) and Complementary Metal-Oxide Semiconductor (CMOS) image sensors are two different technologies used for capturing images digitally. Both types of imagers are fabricated in silicon and convert light into electronic signals for processing. Section 3.1 of this chapter discusses briefly the CCDs and CMOS image sensors. Section 3.2 gives an overview of the photodetection in silicon. The different types of photodiodes used to sense the light intensity are discussed. Section 3.3 discusses the basic types of pixels commonly used in CMOS image sensors. The advantages and disadvantages of each type are elaborated. Section 3.4 discusses the performance parameters of the CMOS image sensors and section 3.5 presents the peripheral circuits used in conventional CMOS image sensors. Section 3.6 describes the design of a 128×128 pixel CMOS image sensor chip with in-pixel analog memory and a 1-bit dynamic memory in a standard 0.18μm 1-poly-3-metal CMOS CIS (CMOS Image Sensor) process. The characterization and measurement results of the image sensor are also presented in section 3.7.