关键词：CMOS技术；RDF；静电控制通道
摘 要：Scaling of CMOS technology into the deep submicron regime gives rise to process variability, which in turn compromises circuit yield. One of the main sources of variability is random dopant fluctuation (RDF) in the channel. Fully Depleted Silicon on Insulator technology has been proposedas a promising alternative to bulk CMOS, due to it’s undoped channel which reduces RDF, as well as due to its better electrostatic control of the channel.