关键词：低功率电子设备；开关比；功率场效应；晶体管
摘 要：In this research, two approaches to achieve transistors with sub-60mV/dec swing are explored. Feedback FET (FBFET) uses positive feedback to induce an abrupt change in current with a small change in the gate voltage. Experimental results show FBFET can achieve less than 2mV/dec swing, with Ion/Ioff ratio larger than six-orders-of-magnitude. Simulation is used to illustrate the operating principle, and to evaluate the potential of FBFET. Another approach is to integrate negative capacitance element onto the gate stack of MOSFETs. The negative capacitance does not change the transport physics, but rather seeks to “amplify” the gate voltage electrostatically to achieve less than 60mV/dec swing.