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子兆电子伏C_(60)离子无定形Si3N4薄膜的离子轨道

Ion Tracks in Amorphous Si_3N_4 Films Produced by Sub MeV C_(60) Ion

作者:K. Nakajima;Y. Morita;M. Suzuki;K. Narumi;Y. Saitoh;K. Hojou;M. Tsujimoto;S. Isoda;K. Kimura 作者单位:Department of Micro Engineering, Kyoto University;Department of Micro Engineering, Kyoto University 加工时间:2015-09-02 信息来源:科技报告(Other) 索取原文[1 页]
关键词:电池材料;化学反应;离子轨道
摘 要:When an energetic ion passes through a material, an ion track may be produced along the ion path if the electronic stopping power S_e is larger than a material dependent threshold value. Although there are a number of studies on the ion tracks produced in crystalline materials using transmission electron microscopy (TEM), there are only a limited number of TEM studies on the ion tracks in amorphous materials due to a lack of sufficient contrast. In this report, the ion tracks in amorphous Si_3N_4 films irradiated with 120-720 keV C_(60)~(+,2+) ions were observed with TEM and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The radial density distribution of the ion track was derived from the observed HAADF-STEM images.
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