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薄膜铁电设备的开关动力学——大规模并行相场研究

Switching Dynamics of Thin Film Ferroelectric Devices - A Massively Parallel Phase Field Study

作者:Khalid Md Ashraf 作者单位:EECS Department, University of California, Berkeley 加工时间:2015-06-14 信息来源:EECS 索取原文[130 页]
关键词:开关动力学;并行;相场;薄膜;铁电材料
摘 要:In this thesis, we investigate the switching dynamics in thin film ferroelectrics. We have developed a phase field model that describes the physics of polarization dynamics at the microscopic scale. A number of efficient numerical methods have been applied for achieving massive parallelization of all the calculation steps. Conformally mapped elements, node wise assembly and prevention of dynamic loading minimized the communication between processors and increased the parallelization efficiency. With these improvements, we have reached the experimental scale - a significant step forward compared to the state of the art thin film ferroelectric switching dynamics models. Using this model, we elucidated the switching dynamics on multiple surfaces of the multiferroic material BFO. We also calculated the switching energy of scaled BFO islands. Finally, we studied the interaction of domain wall propagation with misfit dislocations in the thin film.
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