隧道场效应晶体管双层空穴的建造
Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
作者:Sapan Agarwal;James Teherani;Judy Hoyt;Dimitri Antoniadis;Eli Yablonovitch
作者单位:University of California
加工时间:2014-03-14
信息来源:EECS
索取原文[9 页]
关键词:隧道场效应晶体管;空穴;双层空穴
摘 要:We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design.