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半导体纳米激光

Semiconductor Nanowire Lasers
作者:C. Z. Ning 作者单位:School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA 加工时间:2013-11-05 信息来源:科技报告(other) 索取原文[32 页]
关键词:电子信息;半导体;纳米;激光
摘 要:This year marks 10th anniversary of the demonstration of the first nano-wire lasers (Huang et ah, 2001). Tremendous progress has been made in various aspects of nanowire lasers, most importantly in material growth and characterization, in understanding the basic physics processes, and in the demonstration of optically pumped lasing. As is true for any semiconductor lasers, electrical injection is indispensable in order for nanowire lasers to have any impact on real-world applications. Design, optimization, and fabrication of the most efficient electrical injection laser structures are critical to the next stage of development of nanowire lasers. Nanowire lasers ultimately have to be fabricated using high-yield mass-production processes, thus a fabrication strategy compatible with the standard laser fabrication processing is important.
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