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比较有机非晶硅的流程和挑战:塑料有源矩阵背板中的氢和氧化物TFT

A Comparison of Processes and Challenges Between Organic, a-Si:H, and Oxide TFTs for Active Matrix Backplanes on Plastic

作者:de la Fuente Vornbrock, Alejandro; Almanza-Workman, Marcia; Dickin, Fraser; Elder, Richard E.; Garcia, Robert A.; Holland, Edward; Jackson, Warren; Jam, Mehrban; Jeans, Albert; Kim, Han-Jun; Kwon, Ohs 作者单位:HP Laboratories 加工时间:2014-02-18 信息来源:HP 索取原文[4 页]
关键词:柔性电子产品;薄膜晶体管;柔性显示器;有机半导体;无定形硅;氧化锌
摘 要:Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a- Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a- Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies.
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