关键词：硅基晶体管；高性能电子；InAs设备；隧道场效应晶体管；纳米结构
摘 要：Given the many challenges that silicon based transistors are facing in continuedscaling, it has become highly attractive to consider alternate material platforms in thepursuit of high performance electronics, such as InAs for its high electron mobility.Traditionally InAs devices have suffered from many processing difficulties and high offcurrents. However many of these issues have been resolved with the introduction of III-Vnanostructure on insulator platforms. One interesting challenge that remains is the patterned p-type doping of InAs. The scarcity of photolithographically patternable p-typedoping techniques is a major disadvantage of the InAs platform, as it prevents InAs frombeing applied to many known device structures.
目 录：

Chapter 1 Introduction

Chapter 2 Zinc Gas Phase Doping of InAs Nanowires

Section 2.1 Background

Section 2.2 Methods

Section 2.3 Results

Subsection 2.2.a TEM Micrographs

Subsection 2.2.b Electrical Analysis

Subsection 2.2.c Comparison with Ion Implantation

Chapter 3 Ultrathin InAs Tunneling Field Effect Transistors

Section 3.1 Background

Section 3.2 Methods

Section 3.3 Results

Subsection 3.3.a Electrical Analysis

Subsection 3.3.b Simulation

Chapter 4 Conclusions

Section 4.1 Summary

Section 4.2 Future Work

Section 4.3 Acknowledgements