Magnetoresistive random-access memory (MRAM) is a type of memory technology that uses electron spin to store information. This memory type can replace DRAM and SRAM and has the potential to become the universal memory. MRAM combines the densities of storage memory with the speed of SRAM and is nonvolatile and power efficient. Due to the rising demand for fast, low power consuming, scalable, and nonvolatile memory devices, the global market for MRAM will grow in the future. MRAM has features of both static random-access memory (SRAM) and dynamic random-access memory (DRAM). Thus, it is useful in designing flexible circuits for different devices.

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction

Key market highlights

PART 05: Market landscape

Market overview

Market size and forecast

Five forces analysis

PART 06: Market segmentation by product

Market overview

Market size and forecast

PART 07: Market segmentation by end-user

Global MRAM market by end-user

Global MRAM market: Enterprise storage

Global MRAM market: Consumer electronics

Global MRAM market: Robotics

Global MRAM market: Commercial and military

aerospace market

Global MRAM market: Automotive

PART 08: Market segmentation by geography

MRAM market in North America

MRAM market in APAC

MRAM market in Europe

MRAM market in ROW

PART 09: Decision framework

PART 10: Drivers and challenges

Market drivers

Impact of drivers on key customer segments

Market challenges

Impact of challenges on key customer segments

PART 11: Market trends

Reduction in chip area

Downsizing of DRAM

Global increase in the development of smart cities

PART 12: Vendor landscape

Overview

Other prominent vendors

PART 13: Key vendor analysis

Avalanche Technology

Crocus Nanoelectronics

Everspin Technologies

PART 14: Appendix

List of abbreviations

PART 15: Explore Technavio