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应对恶劣环境的碳化硅金属半导体场效应晶体管
Harsh Environment Silicon Carbide Metal-Semiconductor Field-Effect Transistor
作者:Wei-Cheng Lien 作者单位:University of California 加工时间:2014-03-13 信息来源:EECS 索取原文[36 页]
关键词:恶劣环境;碳化硅;场效应晶体管
摘 要:Among all the harsh environment applications, high temperature applications have drawn lots of attention due to the emerging activity in automotive, turbine engine, space exploration and deep-well drilling telemetry. Silicon carbide has become the candidate for these harsh environment applications because of its wide bandgap, excellent chemical and thermal stability, and high breakdown electric field strength.
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