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对于深海中高压集成ISFET pH传感器应用程序的开发

Development of an Integrated ISFET pH Sensor for High Pressure Applications in the Deep-Sea
作者:Johnson, K. S.Gu, Y.Martz, T. R.Riser, S. C. 作者单位:Monterey Bay Aquarium Research Inst., Moss Landing, CA. 加工时间:2014-01-18 信息来源:科技报告(AD) 索取原文[7 页]
关键词:光机电;传感器;高压集成;ISFET pH
摘 要:The long-term goals of this project are to enable observations of pH in the ocean at depths to 2000 m using sensors deployed on autonomous platforms, particularly profiling floats of the type used in the Argo array. These systems will enable robust, basin-scale observations of changing pH driven by natural and anthropogenic processes. Develop a robust and stable pH sensor for deep-sea applications that is based on the Honeywell Durafet Ion Sensitive Field Effect Transistor (ISFET). The sensor should operate to depths of at least 2000 m. It should have a precision of 0.001 pH and a stability of 0.005 pH over periods up to 5 years throughout the oceanic temperature and salinity range. Capabilities will be demonstrated with deployments on four Webb Research Apex profiling floats.
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