关键词：锗化硅；二级晶体管；光学互连
摘 要：Traditional electrical wiring has become limited in terms of bandwidth capacity and power consumption. As digital circuit elements have reduced in size and increased in speed, electrical interconnects have been struggling to keep up with the bandwidth demands. The primary factors holding back copper wires are high capacitance and inherent dielectric losses. The industry has compensated by placing repeaters and amplifiers along electrical links. However, these methods increase circuit complexity and energy consumption.Phototransistors offer an alternative for low-power optical detection.Others have proposed optical field-effect transistors (FETs) including photo-heterojunction JFETs (photo-hetero-JFETs) [8] and CMOS devices [9]. We will focus on the photo-bipolar junction transistor (photo-BJT) and heterojunction phototransistor (HPT) because of the large current gain of such devices. In Figure 1, the photo-BJT system is compared to the PD receiver system in terms of power consumption and complexity.