关键词：传感器；第三组化合物；金属氧化物半导体；半导体
摘 要：The objective of this proposal is to design and characterize components for utilization in a 94GHz temperature compensated low noise amplifier (LNA) using a 45nm SOI CMOS technology. A ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution, a temperature sensor will also be developed in 90nm CMOS to be utilized in conjunction with a III-V based 94 GHz LNA.