关键词：PN结点；维度影响；隧道场效应晶体管（TFET）
摘 要：Tunneling based field effect transistors (TFETs) have the potential for very sharp On/Off transitions. This can drastically reduce the power consumption of modern electronics. They can operate by either electrostatically controlling the thickness of the tunneling barrier or by exploiting a sharp step in the density of states for switching. We show that current TFETs rely on controlling the thickness of the tunneling barrier but they do not achieve the desired performance. In order to get better performance we need to also exploit a sharp step in the density of states.