关键词：锗源隧道；超低功耗；数字逻辑；隧道场效应晶体管（TFET）
摘 要：In  this  work,  Tunnel  Field  Effect  Transistor  (TFET)  based  on  Band-to-Band  Tunneling (BTBT) will be proposed and investigated as an alternative logic switch which can achieve steeper switching characteristics than the MOSFET to permit for lower threshold (VTH) and supply voltage (VDD) operation.