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锁模半导体激光器的进展
We have attempted to review the most important developments in ultra-short pulse generation by mode-locked semiconductor lasers. Due to the practical limitations and the increasingly broad nature of the field, the choice of emphasis may have been by necessity subjective; apologies are extended to those authors whose work may not have been given due prominence. The overall conclusion is that mode-locked semiconductor laser technology is now successfully challenging lasers of other type in a wide variety of existing applications, and new applications can emerge, stimulated by high-performance available.
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超速的半导体激光源
This chapter reviews recent technological progress in the development of ultrafast light sources for achieving small footprint and low-power consumption optical transceivers. The focus is on various important light sources, for example, directly modulated diode lasers with high optical-gain materials, low-chirp externally modulated diode lasers, and ultrafast diode lasers with new structure and modulation scheme. The coverage of the topics starts with an in-depth theoretical treatment of key characteristics and dependences, illustrates typical realizations of ultrafast diode lasers and integrated laser-modulators, and includes relevant operation and performance characteristics as well.
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自发辐射率增强光学天线的使用
The miniaturization of electronics has relentlessly followed Moore’s law for the past several decades, allowing greater computational power and interconnectivity than ever before. However, limitations on power consumption on chip have put practical limits on speed. This dissertation describes the role that optical antennas can play in reducing power consumption and increasing efficiency and speed for on-chip optical interconnects.High speed optical communication has been dependent on the laser for its narrow linewidth and high modulation bandwidth. It has long outperformed the LED for both practical reasons and its suitable physical characteristics.
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线性半导体光纤放大器
The chapter reviews properties and applications of linear semiconductor optical amplifiers (SOA). Section 12.1 covers SOA basics, including working principles, material systems, structures and their growth. Booster or inline amplifiers as well as low-noise preamplifiers are classified. Section 12.2 discusses the influence of parameters like gain, noise figure, gain saturation, gain and phase dynamics, and alpha-factor. In Sect. 12.3, the application of a linear SOA as a reach extender in future access networks is addressed. The input power dynamic range is introduced, and measurements for on-off keying and phase shift keying signals are shown. Section 12.4 presents the state of the art for commercially available SOA and includes a treatment of reflective SOAs (RSOA) as well.
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计算机显微镜:纳米尺度上的麦克斯韦方程组三维全矢量解的图像合成
Optical imaging systems have traditionally been analyzed using well-established approximations such as ray-based geometrical optics (Born & Wolf, 1999) and scalar Fourier theory (Goodman, 1996). However, there has recently been increased interest in applying the rigorous framework of Maxwell's-equations-based electromagnetic theory and numerical modeling to the analysis of optical imaging systems. The availability of more powerful computer hardware and more efficient computational algorithms has obviously contributed to this interest. Although the basic principles of light scattering encoded in Maxwell's equations had been around for decades, the widespread application of these principles to the complete modeling of an optical imaging system had to wait until the 1990s, at which time the personal computers were getting powerful enough to process megabytes of data in their memory.
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实现三维集成电路的数据转换
Three-dimensional integration is an emerging chip fabrication technique in which multiple integrated circuit dies are joined using conductive posts. 3D integration offers several performance and security advantages, including extremely high bandwidth between the two dies and the ability to augment a processor with a separate die housing custom security features. This thesis performs a feasibility and requirements analysis of a data transformation coprocessor in a three-dimensional integrated circuit. We propose a novel coprocessor architecture in which one layer (control layer) houses application-specific coprocessors for cryptography and compression, which provide acceleration for applications running on a general-purpose processor in another layer (computational layer).
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半导体纳米激光
This year marks 10th anniversary of the demonstration of the first nano-wire lasers (Huang et ah, 2001). Tremendous progress has been made in various aspects of nanowire lasers, most importantly in material growth and characterization, in understanding the basic physics processes, and in the demonstration of optically pumped lasing. As is true for any semiconductor lasers, electrical injection is indispensable in order for nanowire lasers to have any impact on real-world applications. Design, optimization, and fabrication of the most efficient electrical injection laser structures are critical to the next stage of development of nanowire lasers. Nanowire lasers ultimately have to be fabricated using high-yield mass-production processes, thus a fabrication strategy compatible with the standard laser fabrication processing is important.